we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications.all operating parameters must be validated for each customer application by the c ustomer. led - lamp 16.11.2007 rev. 02 radiation green note: special packages without standoff available on request pin 1 - cathode pin 2 - anode maximum ratings t amb = 25c, unless otherwise specified symbol value unit i f 100 ma i fm 800 ma p d 300 mw t amb -40 to +110 c t stg -40 to +110 c junction temperature t j 120 c optical and electrical characteristics t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 20 ma v f 2.6 3.3 v forward voltage* i f = 100 ma v f 2.9 v reverse voltage i r = 10 a v r 5v radiant power i f = 20 ma e 3.6 5.2 mw radiant power* i f = 100 ma e 19.5 mw luminous intensity i f = 20 ma v 340 490 mcd luminous intensity* i f = 100 ma v 1880 mcd peak wavelength i f = 100 ma p 520 530 540 nm dominant wavelength i f = 100 ma d 540 nm spectral bandwidth at 50% i f = 100 ma ? 0.5 40 nm viewing angle i f = 100 ma ? 120 deg. switching time i f = 100 ma t r, t f 45 ns *for information only note: all measurements carried out on epigap equipment type standard description applications high-power green led-chip on to-39 package without covering ELD-540-095 case to-39 technology alingan/al 2 o 3 test onditions (t p 50 s, t p /t = 1/2) customer-specific led-component power dissipation operating temperature range storage temperature range parameter forward current (dc) peak forward current 0,45 0,04 13,46 0,75 1,25 0,08 ? 5,08 ? 7,55 ? 9,00 0, 80 4 5 , 0 0 1 2 chip location epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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